紫外曝光机/光刻机

MA/BA6 

Perfect Low-Cost Solution: 

•   High Accuracy 

•   Good Optical performance

•   latest processes (e.g. UV-NIL) 

Addressed Markets: 

•   MEMS 

•   Telecommunications

•   Compound Semiconductors

•   Nano Imprint Lithography 

Technical Data 

•   Wafer size:  up to 150 mm / 6′′ (round)

•   Min. pieces: 5 x 5mm

•   Mask size: SEMI spec, standard up to 7′′ x 7′′ (SEMI) 

Exposure Modes 

•   Contact: soft, hard, low vacuum, vacuum 

•   Proximity : exposure gap 1-300 μm

Optics 

•   UV250, UV300, UV400 and broadband optics

•   Intensity Uniformity ± 5% on 100mm

•   Constant power or constant intensity

•   Lamp sizes: 200W, 350W, 500W (for UV250)

•   Resolution down to 0,4 μm L/S (vacuum contact, UV250) 

Alignment

•   Top Side Alignment (TSA); Bottom Side Alignment (BSA); Infrared Alignment (IR) Vacuum 

•   TSA alignment accuracy: 0.5μm (with SUSS recommended wafer targets) 

•   BSA:down to 1μm

•   Alignment gap:1–1000μm