紫外曝光机/光刻机

Perfect Low-Cost Solution: 

•   High Accuracy 

•   Good Optical performance

•   latest processes (e.g. UV-NIL) 

Addressed Markets: 

•   MEMS 

•   Telecommunications

•   Compound Semiconductors

•   Nano Imprint Lithography 

Manual Tool: Easy To Operate 

Technical Data 

•   Wafer size: 1′′ up to 100 mm / 4′′ (round)

•   Min. pieces: 5 x 5 mm

•   Wafer thickness: up to 4 mm

•   Mask size: standard 2′′ x 2′′ up to 5′′ x 5′′ (SEMI) 

•   Mask thickness: up to 4.8 mm / 190 mil 

Exposure Modes 

•   Contact: soft, hard, vacuum, soft vacuum 

•   Proximity up to 50μm gap 

Optics 

•   UV250, UV300, UV400 and broadband optics

•   Intensity Uniformity ± 3% on 100mm

•   Constant power or constant intensity

•   Lamp sizes: 200W, 350W, 500W (for UV250)

•   Resolution down to 0,5 μm L/S (vacuum contact, UV250) 

Alignment

•   TSA alignment accuracy: 0.5μm (with SUSS recommended wafer targets) 

•   Transmitted IR Alignment accuracy: < 5μm (<2μm under special process conditions)

•   Alignment gap:10–50μm 

Single or splitfield microscope with/w/o CCD camera