汞CV测试系统

Capability:

• Epi layer characterization
  -Dopant Profile-N(x)
  -Resistivity Profile-p(x)
• Gate metrology
  -Oxide thickness-EOT
  -Flatland, threshold voltage-V_FB,V_T
  Effective oxide charge-Q_EFF
  -Dielectric constant-k
  -Interface state density-Dit
• IV measurements of low-k dielectricsStepped voltage, stepped current,
  .Constant current modes
  -Leakage current-l_L
  -V_BDfor HMET
  -Field-to-breakdown-F_BD
  -K_SB, t_sb,Q_BD, V_max