德国SUSS 手动掩模和粘结对准器 MA/BA6

Perfect Low-Cost Solution:

•  High Accuracy

•  Good Optical performance

•  latest processes (e.g. UV-NIL)

Addressed Markets:

•  MEMS

•  Telecommunications

•  Compound Semiconductors

•  Nano Imprint Lithography

Technical Data

•  Wafer size:  up to 150 mm / 6′′ (round)

•  Min. pieces: 5 x 5mm

•  Mask size: SEMI spec, standard up to 7′′ x 7′′ (SEMI)

Exposure Modes

•  Contact: soft, hard, low vacuum, vacuum

•  Proximity : exposure gap 1-300 μm

Optics

•  UV250, UV300, UV400 and broadband optics

•  Intensity Uniformity ± 5% on 100mm

•  Constant power or constant intensity

•  Lamp sizes: 200W, 350W, 500W (for UV250)

•  Resolution down to 0,4 μm L/S (vacuum contact, UV250)

Alignment

•  Top Side Alignment (TSA); Bottom Side Alignment (BSA); Infrared Alignment (IR) Vacuum

•  TSA alignment accuracy: 0.5μm (with SUSS recommended wafer targets)

•  BSA:down to 1μm

•  Alignment gap:1–1000μm