Fabrication of nanopatterns on H-passivated Si surfa

Nano-sized patterns resulted from localized electrochemical oxidation by using atomic force
microscopy (AFM) were fabricated on H-passivated Si surface. In this paper, the fabrication of
nanopattern by local anodic oxidation (LAO) on H-passivated Si surface is presented. A special attention
is paid to finding relations between the size of oxide nanopatterns and operational parameters such as
tip-sample pulsed bias voltage, pulsewidth and relative humidity to fabricate oxide nanopattern. The
LAO process shows the highly potential of solution processes for fabricating nano/micro-devices
constructed from semiconductor materials for visible-light-emitting devices. 扫描探针显微镜(SPM/AFM/STM)