SVTA公司在氮化物研究方面发表文章

1. GaN-based Devices for Reliable Operation at Very High Temperatures, Amir M. Dabiran, Andrei Osinsky, Andrew M. Wowchak, Peter P. Chow, Luc Stafford, Rohit Khanna, I.I. Kravchenko, F. Ren, S. J. Pearton, Robert C. Fitch, James Gillespie, and Gregg Jessen, October 29-November 3, Cancun, Mexico, ECS Meeting (2006).
2. MBE growth and characterization of low-defect buffer layers for high-performance III-N devices, Amir M. Dabiran, Andrew Wowchak, Peter P. Chow, A.Y. Polyakov , N.B. Smirnov, A.V. Govorkov, A.V. Markov, V. Kumar, and I. Adesida
3. Optimization of p-type AlGaN/GaN and GaN/InGaN superlattice design for enhanced vertical transport, M.Z. Kauser, A. Osinsky, J.W. Dong, B. Hertog, A. Dabiran, and P.P. Chow, Res. Soc. Symp. Proc. 831, E3.39 (2005). 美国SVT MBE分子束外延设备/MBE