Plasma implanted ultra shallow junction boron depth

Plasma based implant systems produce multiple ion species as compared to a beamline implant
using a single mass selected ion, such as BF2
+. Similarly, plasma implant produces a distribution of
ion energies relative to the nearly monoenergetic ions of a beamline implant. To evaluate the
significance of these differences, the ultra shallow junction USJ dopant depth profiles of these two
implant techniques are compared with an advanced secondary ion mass spectrometry SIMS
profi领 technique and a novel diagnostic to measure the as-implanted ion mass and energy
distributions during the pulse of a plasma implant. The plasma and beamline implants match depth
and dose extremely well, consistent with the measured plasma ion characteristics. Additionally, the
depth profile effects of plasma pulse timing, relative to the application of the bias voltage pulse, a
collisional sheath, and USJ dose loss during device mask removal are explored. EQP等离子体质量和能量分析质谱仪